2729-170r4 microsemi reserves the right to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. 2729-170 170 watts, 38 volts, 100s, 10% radar 2700-2900 mhz general description the 2729-170 is an internally matched, common base bipolar transistor capable of providing 170 watts of pulsed rf output power at 100s pulse width, 10% duty factor across the 2700 to 2900 mhz band. the transistor prematch and test fixture has been op timized through the use of pulsed automated load pull. this hermetically solder-sealed transistor is specifically designed for s-band radar applications. it utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. case outline 55ks-1 common base absolute maximum ratings maximum power dissipation device dissipation @ 25 c 1 570 w maximum voltage and current collector to base voltage (bv ces ) 65 v emitter to base voltage (bv ebo ) 3.0 v collector current (i c ) 17 a maximum temperatures storage temperature -65 to +200 c operating junction temperature +200 c electrical characteristics @ 25 c symbol characteristics test conditions min typ max units p out power output f=2700-2900 mhz 170 w p in power input v cc = 38 volts 25.7 w p g power gain pulse width = 100 s 8.2 8.6 db c collector efficiency duty factor = 10% 52 60 % vswr load mismatch tolerance 1 f = 2900 mhz, p o = 170 w 2:1 functional characteristics @ 25 c bv ebo emitter to base breakdown ie = 30 ma 3.0 v iebo emitter to base leakage veb = 1.5 v 2 ma bv ces collector to emitter breakdown ic = 120 ma 56 65 v ices collector to emitter leakage vce = 36 v 7 ma h fe dc C current gain vce = 5v, ic = 600 ma 18 50 jc 1 thermal resistance 0.30 c/w note: 1. at rated output power and pulse conditions issue april 2005 downloaded from: http:///
2729-170r4 microsemi reserves the right to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. 2729-170 vcc = 38 volts, pulse width = 100 s, duty = 10 % g2754-2, product is in characterization, additional cur ves will be inserted at the conclusion. input and load impedance input impedance vs frequency -5 0 5 10 15 2.7 2.75 2.8 2.85 2.9 frequency - ghz zin = rin + jxin rin jxin load impedance vs frequency -6 -4 -2 0 2 4 2.7 2.75 2.8 2.85 2.9 frequency - ghz zload = rl + jxl rl jxl note: in z is looking into the transistor input, load z is looking into the output circuit. efficiency vs power out 0.0 10.0 20.0 30.0 40.0 50.0 60.0 70.0 0.0 50.0 100.0 150.0 200.0 power output (w) efficiency (%) 2.7ghz 2.8ghz 2.9ghz power gain vs power out 0 1 2 3 4 5 6 7 8 9 0.0 50.0 100.0 150.0 200.0 pout (w) gain (db) 2.7ghz 2.8ghz 2.9ghz pout vs. pin 0.0 20.0 40.0 60.0 80.0 100.0 120.0 140.0 160.0 180.0 200.0 0.0 10.0 20.0 30.0 pin (w) pout (w) 2.7ghz 2.8ghz 2.9ghz downloaded from: http:///
2729-170r4 microsemi reserves the right to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. 2729-170 broadband test circuit C destination w (mil) l (mil) destination w (mil) l (mil) f1 51 115 d11 274 160 f2 51 395 d12 51 336 f3 51 630 d13 51 324 f4 51 50 duroid 6002, 20mil, 1oz cu d1 51 424 list of component d2 250 107 destination value size d3 51 284 c1 10pf a d4 314 410 c2 1000pf b d5 96 91 c3 10000pf b d6 827 177 c4 10000pf b d7 965 295 c5 10000pf b d8 51 110 c6 2200uf electrolytic d9 166 125 c7 47uf electrolytic d10 51 100 r 2.5 ohms (may needed) fix 2729-170 downloaded from: http:///
2729-170r4 microsemi reserves the right to make changes without further notice. to verify the current version please check our web site at www.microsemi.com or contact our factory directly. downloaded from: http:///
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